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| IXSH10N120AU1 PRELIMINARY DATA SHEET IGBT with Diode "S" Series - Improved SCSOA Capability IC25 = 20 A VCES = 1200 V VCE(sat) = 4.0 V C Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 M Continuous Transient T C = 25C T C = 90C T C = 25C, 1 ms V GE = 15 V, TJ = 125C, RG = 150 Clamped inductive load, L = 300 H Maximum Ratings 1200 1200 20 30 20 10 40 ICM = 20 @ 0.8 VCES 5 100 -55 ... +150 150 -55 ... +150 s W C C C Features V V E V V TO-247AD A A A A G C G E T J = 125C, VCE = 720 V; VGE = 15V, RG = 150 T C = 25C * High voltage IGBT with * guaranteed short circuit SOA capability. * IGBT with anti-parallel diode in one package * 2 generation HDMOS process nd TM Mounting torque . 1.15/10 Nm/lb-in. 6 300 g C Max. Lead Temperature for Soldering (1.6mm from case for 10s) Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) BV CES V GE(th) I CES I GES V CE(sat) IC IC = 3.25 mA, VGE = 0 V = 750 A, VCE = VGE TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 1200 4 8 400 5 + 100 4.0 V V A mA nA V * AC motor speed control * DC servo and robot drives * Uninterruptible power supplies (UPS) * Switched-mode and resonant-mode power supplies * DC choppers Advantages VCE = 0.8 VCES ,V GE= 0 V Note 2 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V * Saves space (two devices in one package * Easy to mount(isolated mounting hole) * Reduces assembly time and cost * Runs cooler than equivalent 6-pack IGBTs * Easier to package to meet UL requirements 94523C (1/96) IXYS Semiconductor GmbH Edisonstr.15, D-68623 Lampertheim, Germany Phone: +49-6206-5030 Fax: +49-6206-503627 (c)1996 IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXSH10N120AU1 Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 4 S TO-247AD (IXSH) gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % I C(on) C ies C oes C res Qg Q ge Q gc td(on) tri td(off) tfi tc Eoff td(on) tri E (on) td(off) tfi tc Eoff R thJC RthCK 0.25 Inductive load, TJ = 125C IC RG = IC90, VGE = 15 V, L = 300H = 120 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 300H RG = 120 , VCLAMP = 0.8 VCES Note 1 IC = Ic90, VGE = 15 V, VCE = 0.5 VCES VGE = 15V, VCE = 10 V VCE = 25 V, VGE = 0 V, f = 1 MHz 37 800 53 15 40 12 20 100 200 250 620 750 2.5 100 200 TBD 300 1100 1200 4.0 A pF pF pF nC nC nC ns ns ns ns ns mJ ns ns mJ ns ns ns mJ 1.25 K/W K/W VCLAMP = 0.8 VCES Note 1 Reverse Diode (FRED) Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 2.6 TJ = 125C 50 6.5 300 2.3 70 7.2 ns A ns 2.0 K/W V VF IF = IC90, VGE = 0V Pulse test, t< 300 s, duty cycle < 2% trr IRM trr RthJC Notes: IF = 1A; di/dt = -50A/s; VR = 30V; TJ = 25C IF = IC90, VGE = 0V, -diF/dt = 100 A/s TJ = 100C, VR = 540V 1. Switching times may increase for VCE (Clamp) > 0.8 V CES, higher T J or Rg values. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street; Santa Clara, CA 95054 Tel: 408-982-0700; Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-5030 Fax: +49-6206-503627 |
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